聚四氟乙烯材料表面激光改性与刻蚀

利用波长为248 nm的准分子激光束在不同激光能量密度下照射聚四氟乙烯(PTFE)材料的表面,并用扫描电镜(SEM)、X射线光电子能谱(XPS)、拉曼(Raman)光谱等手段对激光处理前后样品的表面形貌、化学成分和结构进行测量和分析,进而对激光与聚四氟乙烯相互作用的机理进行了研究。实验结果表明,激光辐照使聚四氟乙烯表面产生去氟效应,导致表面碳化、分子链的交联以及含氧基团的产生,随着激光能量密度的增加,C=C双键逐渐形成。这些结构的变化可以导致表面硬度和粘结性增强。激光能量密度的大小对照射后样品表面的物理性质和化学结构有着重要的影响,它是聚合物表面激光改性和烧蚀的关键因素。     

H‐self‐adjoint matrices. Application to radiosity

In computer graphics, in the radiosity context, a linear system Φx=b must be solved and there exists a diagonal positive matrix H such that H Φ is symmetric. In this article, we extend this property to complex matrices: we are interested in matrices which lead to Hermitian matrices under premultiplication by a Hermitian positive‐definite matrix H. We shall prove that these matrices are self‐adjoint with respect to a particular innerproduct defined on ?ⁿ. As a result, like Hermitian matrices, they have real eigenvalues and they are diagonalizable. We shall also show how to extend the Courant–Fisher theorem to this class of matrices. Finally, we shall give a new preconditioning matrix which really improves the convergence speed of the conjugate gradient method used for solving the radiosity problem. Copyright © 2002 John Wiley & Sons, Ltd.     

燃煤循环流化床燃烧脱硫的模型预测

燃煤循环流化床燃烧脱硫的模型预测池涌，岑可法，倪明江Ｐ·Ｂａｓｕ（浙江大学能源系杭州３１００２７）关键词：循环流化床，燃烧，脱硫，模型预测一、引言循环流化床锅炉在过去十几年中得到了广泛的应用，但与此同时由于循环流化床内流体动力特性的高度复杂使得数学模...     

Universal ZN-graded differential calculus

We investigate the propeties of differential algebras generated by an operator d satisfying the property d^N = 0 instead of d² = 0 as in the usual case. Several examples of realizations of such differential algebras are given, either in the context of Z_N-graded N × N matrix algebras, or as a generalized differential calculus on manifolds.     

Synthesis of new 7-aminosterol squalamine analogues with high antimicrobial activities through a stereoselective titanium reductive amination reaction

A series of 7-amino- and polyaminosterol analogues of squalamine and trodusquemine were synthesized involving a new stereoselective titanium reductive amination reaction in high chemical yields of up to 95% in numerous cases. These derivatives were evaluated for their in vitro antimicrobial properties against human pathogens. All the compounds present excellent activities against Gram-positive bacteria exhibiting similar results against Staphylococcus aureus and Streptococcus faecalis with minimum inhibitory concentrations (MICs) varying from 2.5 to 10 μg/mL. Numerous derivatives possess also MICs against Gram-negative Escherichia coli bacteria (MICs varying from 2.5 to 10 μg/mL) suggesting that nature of the amino group attached to the sterol moiety plays an important role on the activities of such products.     

ARXPS-analysis and morphology of sputtered nanocrystalline TiC/SiC coatings

ARXPS (angle resolved X-ray photoelectron spectroscopy) measurements are used to obtain informations about surfaces and grain boundaries. Data acquired from nanocrystalline carbidic hard coatings have been employed to establish structural models. Magnetron-sputtered coatings of TiC, SiC and TiC/SiC were examined. In such coatings, partly defective TiC nanocrystallites are surrounded by interfacial carbide. This excess carbon shows a binding state similar to that of doped graphite or fullerenes. X-ray amorphous SiC is found in the residue. On top of sputtered SiC coatings, less oxide and graphite is found as compared to TiC/SiC or TiC coatings.     

NMR line shift of gallium in GaAs crystals in the temperature range 160–360 K

The shift in the nuclear magnetic resonance (NMR) line of ⁷¹Ga isotopes in GaAs crystals is investigated in the temperature range 160–360 K. It is observed that the position of the resonance line is temperature-independent. The value of the shift relative to an isolated nucleus is 440 and 420 ppm for the three samples investigated. The roles of various contributions to the NMR line shift are discussed. Fiz. Tverd. Tela (St. Petersburg) 40, 1418–1419 (August 1998)     

Single electron tunneling rates in multijunction circuits

The rate of electron tunneling through normal metal tunnel junctions is calculated for the case of ultrasmall junction capacitances. The so-called Coulomb blockade of electron tunneling at low temperatures is shown to be strongly affected by the external electrical circuit. Under the common experimental condition of a low impedance environment the Coulomb blockade is suppressed for single tunnel junctions. However, a Coulomb gap structure emerges for junctions embedded in a high impedance environment. For a double junction setup a Coulomb blockade of tunneling arises even for low impedance environments due to the charge quantization on the metallic island between the junctions. An approach using circuit analysis is presented which allows to reduce the calculation of tunneling rates in multijunction circuits to those of a single junction in series with an effective capacitance. The range of validity of the socalled local rule and global rule rates is clarified. It is found that the tunneling rate tends towards the global rule rate as the number of junctions is increased. Some specific results are given for a one-dimensional array of tunnel junctions.